Описание: This book lays the groundwork for further use of Electron Spin Echo Envelop Modulation (ESEEM) and opens the possibility of highly precise chemical fingerprinting. It reveals an astonishingly long memory of spin coherence in semiconductor particles.
Автор: Jacques Jupille; Geoff Thornton Название: Defects at Oxide Surfaces ISBN: 3319380192 ISBN-13(EAN): 9783319380193 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book presents the basics and characterization of defects at oxide surfaces. It provides a state-of-the-art review of the field, containing information to the various types of surface defects, describes analytical methods to study defects, their chemical activity and the catalytic reactivity of oxides.
Автор: Lucia Romano Название: Defects in Semiconductors,91 ISBN: 0128019352 ISBN-13(EAN): 9780128019351 Издательство: Elsevier Science Рейтинг: Цена: 28633.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields.
The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths.
Автор: Edmund G. Seebauer; Meredith C. Kratzer Название: Charged Semiconductor Defects ISBN: 1849968209 ISBN-13(EAN): 9781849968201 Издательство: Springer Рейтинг: Цена: 26120.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: "Charged Defects in Semiconductors" details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors.
Описание: This volume outlines how absorption spectroscopy is important to the investigation of deep-level centers introduced in semiconductors and insulators. It also explains how vibrational spectroscopy determines the atomic structure and symmetry of complexes.
Автор: Jitendra B. Khare; Wojciech Maly Название: From Contamination to Defects, Faults and Yield Loss ISBN: 0792397142 ISBN-13(EAN): 9780792397144 Издательство: Springer Рейтинг: Цена: 19591.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Given such a high level of investment, it is critical for IC manufacturers to reduce manufacturing costs and get a better return on their investment. The most obvious method of reducing the manufacturing cost per die is to improve manufacturing yield.
Автор: Jitendra B. Khare; Wojciech Maly Название: From Contamination to Defects, Faults and Yield Loss ISBN: 146128595X ISBN-13(EAN): 9781461285953 Издательство: Springer Рейтинг: Цена: 16979.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Given such a high level of investment, it is critical for IC manufacturers to reduce manufacturing costs and get a better return on their investment. The most obvious method of reducing the manufacturing cost per die is to improve manufacturing yield.
Автор: Hans-Joachim Queisser; Johann-Martin Spaeth; Haral Название: Point Defects in Semiconductors and Insulators ISBN: 3642627226 ISBN-13(EAN): 9783642627224 Издательство: Springer Рейтинг: Цена: 25155.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap- peared about 10 years ago.
Описание: This book lays the groundwork for further use of Electron Spin Echo Envelop Modulation (ESEEM) and opens the possibility of highly precise chemical fingerprinting. It reveals an astonishingly long memory of spin coherence in semiconductor particles.
Автор: Hans-Joachim Queisser; Johann-Martin Spaeth; Haral Название: Point Defects in Semiconductors and Insulators ISBN: 3540426957 ISBN-13(EAN): 9783540426950 Издательство: Springer Рейтинг: Цена: 34937.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap- peared about 10 years ago.
Автор: Victor Gloumov; Victor A. Perevostchikov; Vladimir Название: Gettering Defects in Semiconductors ISBN: 3642065708 ISBN-13(EAN): 9783642065705 Издательство: Springer Рейтинг: Цена: 30606.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
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